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DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
M3D088
PMBZ5226B to PMBZ5257B Voltage regulator diodes
Product specification Supersedes data of 1999 May 17 2001 Feb 09
Philips Semiconductors
Product specification
Voltage regulator diodes
FEATURES * Total power dissipation: max. 250 mW * Tolerance series: 5% * Working voltage range: nom. 3.3 to 33 V * Non-repetitive peak reverse power dissipation: max. 40 W. APPLICATIONS * General regulation functions.
handbook, halfpage 2
PMBZ5226B to PMBZ5257B
PINNING PIN 1 2 3 anode not connected cathode DESCRIPTION
1
2 n.c.
1 3
DESCRIPTION Low-power voltage regulator diodes in small SOT23 plastic SMD packages. The series consists of 32 types with nominal working voltages from 3.3 to 33 V. MARKING TYPE NUMBER PMBZ5226B PMBZ5227B PMBZ5228B PMBZ5229B PMBZ5230B PMBZ5231B PMBZ5232B PMBZ5233B Note 1. = p : Made in Hong Kong. = t : Made in Malaysia. MARKING CODE(1) 8A 8B 8C 8D 8E 8F 8G 8H TYPE NUMBER PMBZ5234B PMBZ5235B PMBZ5236B PMBZ5237B PMBZ5238B PMBZ5239B PMBZ5240B PMBZ5241B MARKING CODE(1) 8J 8K 8L 8M 8N 8P 8Q 8R TYPE NUMBER PMBZ5242B PMBZ5243B PMBZ5244B PMBZ5245B PMBZ5246B PMBZ5247B PMBZ5248B PMBZ5249B MARKING CODE(1) 8S 8T 8U 8V 8W 8X 8Y 8Z TYPE NUMBER PMBZ5250B PMBZ5251B PMBZ5252B PMBZ5253B PMBZ5254B PMBZ5255B PMBZ5256B PMBZ5257B MARKING CODE 81A 81B 81C 81D 81E 81F 81G 81H
3
Top view
MAM243
Fig.1 Simplified outline (SOT23) and symbol.
2001 Feb 09
2
Philips Semiconductors
Product specification
Voltage regulator diodes
LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL IF IZSM Ptot PZSM Tstg Tj Notes 1. Device mounted on a ceramic substrate of 8 x 10 x 0.7 mm. 2. Device mounted on an FR4 printed circuit-board. ELECTRICAL CHARACTERISTICS Total series Tj = 25 C unless otherwise specified. SYMBOL VF PARAMETER forward voltage PARAMETER continuous forward current non-repetitive peak reverse current total power dissipation non-repetitive peak reverse power dissipation storage temperature junction temperature
PMBZ5226B to PMBZ5257B
CONDITIONS - tp = 100 s; square wave; Tj = 25 C prior to surge Tamb = 25 C; note 1 Tamb = 25 C; note 2 tp = 100 s; square wave; Tj = 25 C prior to surge; see Fig.2
MIN. see Table "Per type" - - - -65 -
MAX. 200
UNIT mA
300 250 40 +150 150
mW mW W C C
CONDITIONS IF = 200 mA; see Fig.3
MAX. 1.1
UNIT V
2001 Feb 09
3
Per type Tj = 25 C unless otherwise specified. TEST WORKING DIFFERENTIAL TEMP. COEFF. CURRENT SZ (%/K) VOLTAGE RESISTANCE rdif () at IZ(2) IZtest (mA) VZ (V)(1) at IZtest at IZ = 0.25 mA NOM. PMBZ5226B PMBZ5227B PMBZ5228B PMBZ5229B PMBZ5230B PMBZ5231B PMBZ5232B PMBZ5233B PMBZ5234B PMBZ5235B 3.3 3.6 3.9 4.3 4.7 5.1 5.6 6.0 6.2 6.8 7.5 8.2 8.7 9.1 10 11 12 13 14 15 16 17 18 19 20 22 MAX. 1600 1700 1900 2000 2000 2000 1600 1600 1000 750 500 500 600 600 600 600 600 600 600 600 600 600 600 600 600 600 TYP. -0.064 -0.065 -0.063 -0.058 -0.047 -0.013 +0.023 +0.023 +0.039 +0.040 +0.047 +0.052 +0.053 +0.055 +0.055 +0.058 +0.062 +0.065 +0.067 +0.073 +0.073 +0.073 +0.078 +0.078 +0.080 +0.080 20 20 20 20 20 20 20 20 20 20 20 20 20 20 20 20 20 9.5 9.0 8.5 7.8 7.4 7.0 6.6 6.2 5.6 DIODE CAP. Cd (pF) at f = 1 MHz; at VR = 0 V MAX. 450 450 450 450 450 300 300 300 200 200 150 150 150 150 90 85 85 80 80 75 75 75 70 70 60 60 REVERSE CURRENT at REVERSE VOLTAGE IR (A) MAX. 25 15 10 5 5 5 5 5 5 3 3 3 3 3 3 2 1 0.5 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 VR (V) 1.0 1.0 1.0 1.0 1.0 2.0 3.0 3.5 4.0 5.0 6.0 6.5 6.5 7.0 8.0 8.4 9.1 9.9 10 11 12 13 14 14 15 17 NON-REPETITIVE PEAK REVERSE CURRENT IZSM (A) at tp = 100 s; Tamb = 25 C MAX. 6.0 6.0 6.0 6.0 6.0 6.0 6.0 6.0 6.0 6.0 4.0 4.0 3.5 3.0
2001 Feb 09 4
Philips Semiconductors
Voltage regulator diodes
TYPE No.
PMBZ5236B PMBZ5237B PMBZ5238B PMBZ5239B PMBZ5240B PMBZ5241B PMBZ5242B PMBZ5243B PMBZ5244B PMBZ5245B PMBZ5246B PMBZ5247B PMBZ5248B PMBZ5249B PMBZ5250B PMBZ5251B
PMBZ5226B to PMBZ5257B
3.0 2.5 2.5 2.5 2.0 2.0 1.5 1.5 1.5 1.5 1.5 1.25
Product specification
2001 Feb 09 5
Philips Semiconductors
TYPE No.
TEST WORKING DIFFERENTIAL TEMP. COEFF. SZ (%/K) CURRENT VOLTAGE RESISTANCE at IZ(2) rdif () IZtest (mA) VZ (V)(1) at IZ = 0.25 mA at IZtest NOM. MAX. 600 600 600 600 600 700 TYP. +0.081 +0.082 +0.085 +0.085 +0.085 +0.085 5.2 5.0 4.6 4.5 4.2 3.8
DIODE CAP. Cd (pF) at f = 1 MHz; at VR = 0 V MAX. 55 55 50 50 50 45
REVERSE CURRENT at REVERSE VOLTAGE IR (A) MAX. 0.1 0.1 0.1 0.1 0.1 0.1 VR (V) 18 19 21 21 23 25
NON-REPETITIVE PEAK REVERSE CURRENT IZSM (A) at tp = 100 s; Tamb = 25 C MAX. 1.25 1.25 1.0 1.0 1.0 0.9
Voltage regulator diodes
PMBZ5252B PMBZ5253B PMBZ5254B PMBZ5255B PMBZ5256B PMBZ5257B Notes
24 25 27 28 30 33
1. VZ is measured with device at thermal equilibrium while mounted on a ceramic substrate of 8 x 10 x 0.7 mm. 2. For types PMBZ5226B to PMBZ5242B the IZ current is 7.5 mA; for PMBZ5243B and higher IZ = IZtest. SZ values valid between 25 C and 125 C.
PMBZ5226B to PMBZ5257B
Product specification
Philips Semiconductors
Product specification
Voltage regulator diodes
THERMAL CHARACTERISTICS SYMBOL Rth j-tp Rth j-a Note 1. Device mounted on a printed-circuit board. GRAPHICAL DATA PARAMETER thermal resistance from junction to tie-point thermal resistance from junction to ambient note 1
PMBZ5226B to PMBZ5257B
CONDITIONS
VALUE 330 500
UNIT K/W K/W
103 handbook, halfpage PZSM (W) 102
MBG801
MBG781
handbook, halfpage
300
IF (mA) 200
(1)
10
(2)
100
1 10-1
1
duration (ms)
10
0 0.6
0.8
VF (V)
1.0
(1) Tj = 25 C (prior to surge). (2) Tj = 150 C (prior to surge).
Fig.2
Maximum permissible non-repetitive peak reverse power dissipation versus duration.
Fig.3
Forward current as a function of forward voltage; typical values.
2001 Feb 09
6
Philips Semiconductors
Product specification
Voltage regulator diodes
PACKAGE OUTLINE Plastic surface mounted package; 3 leads
PMBZ5226B to PMBZ5257B
SOT23
D
B
E
A
X
HE
vMA
3
Q A A1
1
e1 e bp
2
wMB detail X Lp
c
0
1 scale
2 mm
DIMENSIONS (mm are the original dimensions) UNIT mm A 1.1 0.9 A1 max. 0.1 bp 0.48 0.38 c 0.15 0.09 D 3.0 2.8 E 1.4 1.2 e 1.9 e1 0.95 HE 2.5 2.1 Lp 0.45 0.15 Q 0.55 0.45 v 0.2 w 0.1
OUTLINE VERSION SOT23
REFERENCES IEC JEDEC TO-236AB EIAJ
EUROPEAN PROJECTION
ISSUE DATE 97-02-28 99-09-13
2001 Feb 09
7
Philips Semiconductors
Product specification
Voltage regulator diodes
DATA SHEET STATUS DATA SHEET STATUS Objective specification PRODUCT STATUS Development
PMBZ5226B to PMBZ5257B
DEFINITIONS (1) This data sheet contains the design target or goal specifications for product development. Specification may change in any manner without notice. This data sheet contains preliminary data, and supplementary data will be published at a later date. Philips Semiconductors reserves the right to make changes at any time without notice in order to improve design and supply the best possible product. This data sheet contains final specifications. Philips Semiconductors reserves the right to make changes at any time without notice in order to improve design and supply the best possible product.
Preliminary specification
Qualification
Product specification
Production
Note 1. Please consult the most recently issued data sheet before initiating or completing a design. DEFINITIONS Short-form specification The data in a short-form specification is extracted from a full data sheet with the same type number and title. For detailed information see the relevant data sheet or data handbook. Limiting values definition Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 60134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Applications that are described herein for any of these products are for illustrative purposes only. Philips Semiconductors make no representation or warranty that such applications will be suitable for the specified use without further testing or modification. DISCLAIMERS Life support applications These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips Semiconductors customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips Semiconductors for any damages resulting from such application. Right to make changes Philips Semiconductors reserves the right to make changes, without notice, in the products, including circuits, standard cells, and/or software, described or contained herein in order to improve design and/or performance. Philips Semiconductors assumes no responsibility or liability for the use of any of these products, conveys no licence or title under any patent, copyright, or mask work right to these products, and makes no representations or warranties that these products are free from patent, copyright, or mask work right infringement, unless otherwise specified.
2001 Feb 09
8
Philips Semiconductors
Product specification
Voltage regulator diodes
NOTES
PMBZ5226B to PMBZ5257B
2001 Feb 09
9
Philips Semiconductors
Product specification
Voltage regulator diodes
NOTES
PMBZ5226B to PMBZ5257B
2001 Feb 09
10
Philips Semiconductors
Product specification
Voltage regulator diodes
NOTES
PMBZ5226B to PMBZ5257B
2001 Feb 09
11
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SCA 71
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Printed in The Netherlands
613514/03/pp12
Date of release: 2001
Feb 09
Document order number:
9397 750 07839

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